Details
Zusammenfassung: <jats:title>Abstract</jats:title><jats:p>An electron beam testing system was established for a complete and detailed analysis of latch‐up in CMOS integrated circuits. Problems which can be studied include: <jats:list list-type="explicit-label"> <jats:list-item><jats:p>identification of latch‐up current paths in steady state condition;</jats:p></jats:list-item> <jats:list-item><jats:p>measurement of the local latch‐up sensitivity of the various parts of the circuit;</jats:p></jats:list-item> <jats:list-item><jats:p>observation of the time evolution of latch‐up from the firing event to the final condition.</jats:p></jats:list-item> </jats:list></jats:p>
Umfang: 20-33
ISSN: 0161-0457
1932-8745
DOI: 10.1002/sca.4950080105