SOLR
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1797636852380860416 |
| author |
Mueller, Steve |
| author2 |
Waechtler, Thomas, Hofmann, Lutz, Tuchscherer, Andre, Mothes, Robert, Gordan, Ovidiu, Lehmann, Daniel, Haidu, Francisc, Ogiewa, Marcel, Gerlich, Lukas, Ding, Shao-Feng, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Zahn, Dietrich R.T, Qu, Xin-Ping |
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| author_facet |
Mueller, Steve, Waechtler, Thomas, Hofmann, Lutz, Tuchscherer, Andre, Mothes, Robert, Gordan, Ovidiu, Lehmann, Daniel, Haidu, Francisc, Ogiewa, Marcel, Gerlich, Lukas, Ding, Shao-Feng, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Zahn, Dietrich R.T, Qu, Xin-Ping |
| author_role |
|
| author_sort |
Mueller, Steve |
| author_variant |
s m sm |
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Library A |
| collection |
sid-22-col-qucosa |
| container_reference |
Semiconductor Conference Dresden (SCD), 27-28 Sept. 2011, Dresden, Germany; DOI: 10.1109/SCD.2011.6068736 |
| contents |
In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD process is based on the Cu (I) β-diketonate precursor [(nBu3P)2Cu(acac)] and a mixture of water vapor and oxygen ("wet O2") as co-reactant at temperatures between 100 and 130 °C. Highly efficient conversions of the CuxO to metallic Cu films are realized by a vapor phase treatment with formic acid (HCOOH), especially on Ru substrates. Electrochemical deposition (ECD) experiments on Cu ALD seed / Ru liner stacks in typical interconnect patterns are showing nearly perfectly filling behavior. For improving the HCOOH reduction on arbitrary substrates, a catalytic amount of Ru was successful introduced into the CuxO films during the ALD with a precursor mixture of the Cu (I) β-diketonate and an organometallic Ru precursor. Furthermore, molecular and atomic hydrogen were studied as promising alternative reducing agents. |
| dewey-full |
600 |
| dewey-hundreds |
600 - Technology (Applied sciences) |
| dewey-ones |
600 - Technology (Applied sciences) |
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600 |
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600 |
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3600 |
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600 - Technology (Applied sciences) |
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Online, Free |
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Technik |
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technology |
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eBook |
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Book, E-Book |
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Ebook |
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Book, E-Book |
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Book, E-Book |
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Buch |
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text-online-monograph-independent-conference |
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e-Book |
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Book, E-Book |
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ElectronicBook |
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Book, E-Book |
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Book, E-Book |
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E-Book |
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Konferenzschrift |
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Konferenzschrift |
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not assigned |
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not assigned |
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Semiconductor Conference Dresden (SCD), 27-28 Sept. 2011, Dresden, Germany; DOI: 10.1109/SCD.2011.6068736 |
| id |
22-ch1-qucosa-84003 |
| illustrated |
Not Illustrated |
| imprint |
Piscataway, IEEE, 2011 |
| imprint_str_mv |
Online-Ausg.: 2012 |
| institution |
DE-105, DE-Gla1, DE-Brt1, DE-D161, DE-540, DE-Pl11, DE-Rs1, DE-Bn3, DE-Zi4, DE-Zwi2, DE-D117, DE-Mh31, DE-D275, DE-Ch1, DE-15, DE-D13, DE-L242, DE-L229, DE-L328 |
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English |
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2024-04-29T03:08:14.837Z |
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mueller2011thermalaldofcuviareductionofcuxofilmsfortheadvancedmetallizationinspintronicandulsiinterconnectsystems |
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Qucosa |
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2011 |
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2011 |
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Piscataway |
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IEEE |
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marcfinc |
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ch1-qucosa-84003 |
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marcfinc |
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No subject assigned |
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22 |
| spelling |
Mueller, Steve, Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems, Piscataway IEEE 2011, txt, nc, Online-Ausg. 2012 Online-Ressource (Text) Universitätsbibliothek Chemnitz, In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD process is based on the Cu (I) β-diketonate precursor [(nBu3P)2Cu(acac)] and a mixture of water vapor and oxygen ("wet O2") as co-reactant at temperatures between 100 and 130 °C. Highly efficient conversions of the CuxO to metallic Cu films are realized by a vapor phase treatment with formic acid (HCOOH), especially on Ru substrates. Electrochemical deposition (ECD) experiments on Cu ALD seed / Ru liner stacks in typical interconnect patterns are showing nearly perfectly filling behavior. For improving the HCOOH reduction on arbitrary substrates, a catalytic amount of Ru was successful introduced into the CuxO films during the ALD with a precursor mixture of the Cu (I) β-diketonate and an organometallic Ru precursor. Furthermore, molecular and atomic hydrogen were studied as promising alternative reducing agents., Atomlagenabscheidung, Ald, Ruthenium, Ameisensäure, Wasserstoff, Reduktion, Ulsi, Metallisierung, Galvanik, Spintronik, Atomic Layer Deposition, Copper Oxide, Formic Acid, Hydrogen, Reduction, Interconnect, Electrochemical Deposition, Ecd, Spintronics, Kupferoxid, Metallisieren, Galvanische Beschichtung, Kupfer, Konferenzschrift, Waechtler, Thomas, Hofmann, Lutz, Tuchscherer, Andre, Mothes, Robert, Gordan, Ovidiu, Lehmann, Daniel, Haidu, Francisc, Ogiewa, Marcel, Gerlich, Lukas, Ding, Shao-Feng, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Zahn, Dietrich R.T., Qu, Xin-Ping, Semiconductor Conference Dresden (SCD), 27-28 Sept. 2011, Dresden, Germany; DOI: 10.1109/SCD.2011.6068736, text/html https://nbn-resolving.org/urn:nbn:de:bsz:ch1-qucosa-84003 Online-Zugriff |
| spellingShingle |
Mueller, Steve, Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems, In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD process is based on the Cu (I) β-diketonate precursor [(nBu3P)2Cu(acac)] and a mixture of water vapor and oxygen ("wet O2") as co-reactant at temperatures between 100 and 130 °C. Highly efficient conversions of the CuxO to metallic Cu films are realized by a vapor phase treatment with formic acid (HCOOH), especially on Ru substrates. Electrochemical deposition (ECD) experiments on Cu ALD seed / Ru liner stacks in typical interconnect patterns are showing nearly perfectly filling behavior. For improving the HCOOH reduction on arbitrary substrates, a catalytic amount of Ru was successful introduced into the CuxO films during the ALD with a precursor mixture of the Cu (I) β-diketonate and an organometallic Ru precursor. Furthermore, molecular and atomic hydrogen were studied as promising alternative reducing agents., Atomlagenabscheidung, Ald, Ruthenium, Ameisensäure, Wasserstoff, Reduktion, Ulsi, Metallisierung, Galvanik, Spintronik, Atomic Layer Deposition, Copper Oxide, Formic Acid, Hydrogen, Reduction, Interconnect, Electrochemical Deposition, Ecd, Spintronics, Kupferoxid, Metallisieren, Galvanische Beschichtung, Kupfer, Konferenzschrift |
| title |
Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems |
| title_auth |
Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems |
| title_full |
Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems |
| title_fullStr |
Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems |
| title_full_unstemmed |
Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems |
| title_in_hierarchy |
|
| title_short |
Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems |
| title_sort |
thermal ald of cu via reduction of cuxo films for the advanced metallization in spintronic and ulsi interconnect systems |
| title_unstemmed |
Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems |
| topic |
Atomlagenabscheidung, Ald, Ruthenium, Ameisensäure, Wasserstoff, Reduktion, Ulsi, Metallisierung, Galvanik, Spintronik, Atomic Layer Deposition, Copper Oxide, Formic Acid, Hydrogen, Reduction, Interconnect, Electrochemical Deposition, Ecd, Spintronics, Kupferoxid, Metallisieren, Galvanische Beschichtung, Kupfer, Konferenzschrift |
| topic_facet |
Atomlagenabscheidung, Ald, Ruthenium, Ameisensäure, Wasserstoff, Reduktion, Ulsi, Metallisierung, Galvanik, Spintronik, Atomic Layer Deposition, Copper Oxide, Formic Acid, Hydrogen, Reduction, Interconnect, Electrochemical Deposition, Ecd, Spintronics, Kupferoxid, Metallisieren, Galvanische Beschichtung, Kupfer, Konferenzschrift |
| url |
https://nbn-resolving.org/urn:nbn:de:bsz:ch1-qucosa-84003 |
| urn |
urn:nbn:de:bsz:ch1-qucosa-84003 |
| work_keys_str_mv |
AT muellersteve thermalaldofcuviareductionofcuxofilmsfortheadvancedmetallizationinspintronicandulsiinterconnectsystems, AT waechtlerthomas thermalaldofcuviareductionofcuxofilmsfortheadvancedmetallizationinspintronicandulsiinterconnectsystems, AT hofmannlutz thermalaldofcuviareductionofcuxofilmsfortheadvancedmetallizationinspintronicandulsiinterconnectsystems, AT tuchschererandre thermalaldofcuviareductionofcuxofilmsfortheadvancedmetallizationinspintronicandulsiinterconnectsystems, AT mothesrobert thermalaldofcuviareductionofcuxofilmsfortheadvancedmetallizationinspintronicandulsiinterconnectsystems, AT gordanovidiu thermalaldofcuviareductionofcuxofilmsfortheadvancedmetallizationinspintronicandulsiinterconnectsystems, AT lehmanndaniel thermalaldofcuviareductionofcuxofilmsfortheadvancedmetallizationinspintronicandulsiinterconnectsystems, AT haidufrancisc thermalaldofcuviareductionofcuxofilmsfortheadvancedmetallizationinspintronicandulsiinterconnectsystems, AT ogiewamarcel thermalaldofcuviareductionofcuxofilmsfortheadvancedmetallizationinspintronicandulsiinterconnectsystems, AT gerlichlukas thermalaldofcuviareductionofcuxofilmsfortheadvancedmetallizationinspintronicandulsiinterconnectsystems, AT dingshaofeng thermalaldofcuviareductionofcuxofilmsfortheadvancedmetallizationinspintronicandulsiinterconnectsystems, AT schulzstefane thermalaldofcuviareductionofcuxofilmsfortheadvancedmetallizationinspintronicandulsiinterconnectsystems, AT gessnerthomas thermalaldofcuviareductionofcuxofilmsfortheadvancedmetallizationinspintronicandulsiinterconnectsystems, AT langheinrich thermalaldofcuviareductionofcuxofilmsfortheadvancedmetallizationinspintronicandulsiinterconnectsystems, AT zahndietrichrt thermalaldofcuviareductionofcuxofilmsfortheadvancedmetallizationinspintronicandulsiinterconnectsystems, AT quxinping thermalaldofcuviareductionofcuxofilmsfortheadvancedmetallizationinspintronicandulsiinterconnectsystems |
