Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems

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Personen und Körperschaften:	Mueller, Steve, Waechtler, Thomas, Hofmann, Lutz, Tuchscherer, Andre, Mothes, Robert, Gordan, Ovidiu, Lehmann, Daniel, Haidu, Francisc, Ogiewa, Marcel, Gerlich, Lukas, Ding, Shao-Feng, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Zahn, Dietrich R.T, Qu, Xin-Ping
Titel:	Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems
Format:	E-Book
Sprache:	Englisch
veröffentlicht:	Piscataway IEEE 2011 Online-Ausg.. 2012
Gesamtaufnahme:	Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems; Semiconductor Conference Dresden (SCD), 27-28 Sept. 2011, Dresden, Germany; DOI: 10.1109/SCD.2011.6068736
Schlagwörter:	Atomlagenabscheidung Ald Ruthenium Ameisensäure Wasserstoff Reduktion Ulsi Metallisierung Galvanik Spintronik Atomic Layer Deposition Copper Oxide Formic Acid Hydrogen Reduction Interconnect Electrochemical Deposition Ecd Spintronics Kupferoxid Metallisieren Galvanische Beschichtung Kupfer Konferenzschrift
Quelle:	Qucosa

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Zusammenfassung:	In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD process is based on the Cu (I) β-diketonate precursor [(nBu3P)2Cu(acac)] and a mixture of water vapor and oxygen ("wet O2") as co-reactant at temperatures between 100 and 130 °C. Highly efficient conversions of the CuxO to metallic Cu films are realized by a vapor phase treatment with formic acid (HCOOH), especially on Ru substrates. Electrochemical deposition (ECD) experiments on Cu ALD seed / Ru liner stacks in typical interconnect patterns are showing nearly perfectly filling behavior. For improving the HCOOH reduction on arbitrary substrates, a catalytic amount of Ru was successful introduced into the CuxO films during the ALD with a precursor mixture of the Cu (I) β-diketonate and an organometallic Ru precursor. Furthermore, molecular and atomic hydrogen were studied as promising alternative reducing agents.