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Zusammenfassung: <jats:p>We present a whispering-gallery-mode resonance-enhanced microwave-detected photoconductivity-decay method for contactless measurement of recombination lifetime in highresistivity semiconductor layers. We applied the method to undoped Silicon wafers of high resistivity at 5 and 30 kOhm*cm and measured the conductivity relaxation times of 10 and 14 microseconds, respectively. In wafers being considered, they are supposed to be defined by the electron-hole diffusion from the bulk to the wafer surfaces.</jats:p>
Umfang: 101-107
ISSN: 2119-0275
DOI: 10.7716/aem.v8i2.1127