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Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device
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Journal Title: | Applied Science and Convergence Technology |
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Authors and Corporations: | , , , , |
In: | Applied Science and Convergence Technology, 26, 2017, 3, p. 50-51 |
Type of Resource: | E-Article |
Language: | English |
published: |
The Korean Vacuum Society
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Subjects: |