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Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device
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| Zeitschriftentitel: | Applied Science and Convergence Technology |
|---|---|
| Personen und Körperschaften: | , , , , |
| In: | Applied Science and Convergence Technology, 26, 2017, 3, S. 50-51 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
The Korean Vacuum Society
|
| Schlagwörter: |
| author_facet |
Jo, Yongcheol Kim, Jongmin Cho, Sangeun Kim, Hyungsang Im, Hyunsik Jo, Yongcheol Kim, Jongmin Cho, Sangeun Kim, Hyungsang Im, Hyunsik |
|---|---|
| author |
Jo, Yongcheol Kim, Jongmin Cho, Sangeun Kim, Hyungsang Im, Hyunsik |
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Jo, Yongcheol Kim, Jongmin Cho, Sangeun Kim, Hyungsang Im, Hyunsik Applied Science and Convergence Technology Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device Earth-Surface Processes Electrical and Electronic Engineering Physical and Theoretical Chemistry Condensed Matter Physics Materials Science (miscellaneous) |
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jo, yongcheol |
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Jo, Yongcheol Kim, Jongmin Cho, Sangeun Kim, Hyungsang Im, Hyunsik 2288-6559 The Korean Vacuum Society Earth-Surface Processes Electrical and Electronic Engineering Physical and Theoretical Chemistry Condensed Matter Physics Materials Science (miscellaneous) http://dx.doi.org/10.5757/asct.2017.26.3.50 Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device Applied Science and Convergence Technology |
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| title |
Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device |
| title_unstemmed |
Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device |
| title_full |
Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device |
| title_fullStr |
Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device |
| title_full_unstemmed |
Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device |
| title_short |
Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device |
| title_sort |
coulomb interaction induced gap in an al/sio2/si:p tunnelling device |
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Earth-Surface Processes Electrical and Electronic Engineering Physical and Theoretical Chemistry Condensed Matter Physics Materials Science (miscellaneous) |
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| institution | DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-Zwi2, DE-D161 |
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| physical | 50-51 |
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| spelling | Jo, Yongcheol Kim, Jongmin Cho, Sangeun Kim, Hyungsang Im, Hyunsik 2288-6559 The Korean Vacuum Society Earth-Surface Processes Electrical and Electronic Engineering Physical and Theoretical Chemistry Condensed Matter Physics Materials Science (miscellaneous) http://dx.doi.org/10.5757/asct.2017.26.3.50 Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device Applied Science and Convergence Technology |
| spellingShingle | Jo, Yongcheol, Kim, Jongmin, Cho, Sangeun, Kim, Hyungsang, Im, Hyunsik, Applied Science and Convergence Technology, Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device, Earth-Surface Processes, Electrical and Electronic Engineering, Physical and Theoretical Chemistry, Condensed Matter Physics, Materials Science (miscellaneous) |
| title | Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device |
| title_full | Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device |
| title_fullStr | Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device |
| title_full_unstemmed | Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device |
| title_short | Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device |
| title_sort | coulomb interaction induced gap in an al/sio2/si:p tunnelling device |
| title_unstemmed | Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device |
| topic | Earth-Surface Processes, Electrical and Electronic Engineering, Physical and Theoretical Chemistry, Condensed Matter Physics, Materials Science (miscellaneous) |
| url | http://dx.doi.org/10.5757/asct.2017.26.3.50 |