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Possible electric field induced indirect to direct band gap transition in MoSe2
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| Zeitschriftentitel: | Scientific Reports |
|---|---|
| Personen und Körperschaften: | , , , , , , |
| In: | Scientific Reports, 7, 2017, 1 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
Springer Science and Business Media LLC
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| Schlagwörter: |
| author_facet |
Kim, B. S. Kyung, W. S. Seo, J. J. Kwon, J. Y. Denlinger, J. D. Kim, C. Park, S. R. Kim, B. S. Kyung, W. S. Seo, J. J. Kwon, J. Y. Denlinger, J. D. Kim, C. Park, S. R. |
|---|---|
| author |
Kim, B. S. Kyung, W. S. Seo, J. J. Kwon, J. Y. Denlinger, J. D. Kim, C. Park, S. R. |
| spellingShingle |
Kim, B. S. Kyung, W. S. Seo, J. J. Kwon, J. Y. Denlinger, J. D. Kim, C. Park, S. R. Scientific Reports Possible electric field induced indirect to direct band gap transition in MoSe2 Multidisciplinary |
| author_sort |
kim, b. s. |
| spelling |
Kim, B. S. Kyung, W. S. Seo, J. J. Kwon, J. Y. Denlinger, J. D. Kim, C. Park, S. R. 2045-2322 Springer Science and Business Media LLC Multidisciplinary http://dx.doi.org/10.1038/s41598-017-05613-5 <jats:title>Abstract</jats:title><jats:p>Direct band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX<jats:sub>2</jats:sub> (M = Mo, W; X = S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more practically usable bulk and multilayer MX<jats:sub>2</jats:sub> have indirect-gaps. It is thus highly desired to turn bulk and multilayer MX<jats:sub>2</jats:sub> into direct band-gap semiconductors by controlling external parameters. Here, we report angle-resolved photoemission spectroscopy (ARPES) results from Rb dosed MoSe<jats:sub>2</jats:sub> that suggest possibility for electric field induced indirect to direct band-gap transition in bulk MoSe<jats:sub>2</jats:sub>. The Rb concentration dependent data show detailed evolution of the band-gap, approaching a direct band-gap state. As ionized Rb layer on the surface provides a strong electric field perpendicular to the surface within a few surface layers of MoSe<jats:sub>2</jats:sub>, our data suggest that direct band-gap in MoSe<jats:sub>2</jats:sub> can be achieved if a strong electric field is applied, which is a step towards optoelectronic application of bulk materials.</jats:p> Possible electric field induced indirect to direct band gap transition in MoSe2 Scientific Reports |
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10.1038/s41598-017-05613-5 |
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| title |
Possible electric field induced indirect to direct band gap transition in MoSe2 |
| title_unstemmed |
Possible electric field induced indirect to direct band gap transition in MoSe2 |
| title_full |
Possible electric field induced indirect to direct band gap transition in MoSe2 |
| title_fullStr |
Possible electric field induced indirect to direct band gap transition in MoSe2 |
| title_full_unstemmed |
Possible electric field induced indirect to direct band gap transition in MoSe2 |
| title_short |
Possible electric field induced indirect to direct band gap transition in MoSe2 |
| title_sort |
possible electric field induced indirect to direct band gap transition in mose2 |
| topic |
Multidisciplinary |
| url |
http://dx.doi.org/10.1038/s41598-017-05613-5 |
| publishDate |
2017 |
| physical |
|
| description |
<jats:title>Abstract</jats:title><jats:p>Direct band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX<jats:sub>2</jats:sub> (M = Mo, W; X = S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more practically usable bulk and multilayer MX<jats:sub>2</jats:sub> have indirect-gaps. It is thus highly desired to turn bulk and multilayer MX<jats:sub>2</jats:sub> into direct band-gap semiconductors by controlling external parameters. Here, we report angle-resolved photoemission spectroscopy (ARPES) results from Rb dosed MoSe<jats:sub>2</jats:sub> that suggest possibility for electric field induced indirect to direct band-gap transition in bulk MoSe<jats:sub>2</jats:sub>. The Rb concentration dependent data show detailed evolution of the band-gap, approaching a direct band-gap state. As ionized Rb layer on the surface provides a strong electric field perpendicular to the surface within a few surface layers of MoSe<jats:sub>2</jats:sub>, our data suggest that direct band-gap in MoSe<jats:sub>2</jats:sub> can be achieved if a strong electric field is applied, which is a step towards optoelectronic application of bulk materials.</jats:p> |
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| author | Kim, B. S., Kyung, W. S., Seo, J. J., Kwon, J. Y., Denlinger, J. D., Kim, C., Park, S. R. |
| author_facet | Kim, B. S., Kyung, W. S., Seo, J. J., Kwon, J. Y., Denlinger, J. D., Kim, C., Park, S. R., Kim, B. S., Kyung, W. S., Seo, J. J., Kwon, J. Y., Denlinger, J. D., Kim, C., Park, S. R. |
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| description | <jats:title>Abstract</jats:title><jats:p>Direct band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX<jats:sub>2</jats:sub> (M = Mo, W; X = S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more practically usable bulk and multilayer MX<jats:sub>2</jats:sub> have indirect-gaps. It is thus highly desired to turn bulk and multilayer MX<jats:sub>2</jats:sub> into direct band-gap semiconductors by controlling external parameters. Here, we report angle-resolved photoemission spectroscopy (ARPES) results from Rb dosed MoSe<jats:sub>2</jats:sub> that suggest possibility for electric field induced indirect to direct band-gap transition in bulk MoSe<jats:sub>2</jats:sub>. The Rb concentration dependent data show detailed evolution of the band-gap, approaching a direct band-gap state. As ionized Rb layer on the surface provides a strong electric field perpendicular to the surface within a few surface layers of MoSe<jats:sub>2</jats:sub>, our data suggest that direct band-gap in MoSe<jats:sub>2</jats:sub> can be achieved if a strong electric field is applied, which is a step towards optoelectronic application of bulk materials.</jats:p> |
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| imprint_str_mv | Springer Science and Business Media LLC, 2017 |
| institution | DE-D275, DE-Bn3, DE-Brt1, DE-Zwi2, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229 |
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| publisher | Springer Science and Business Media LLC |
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| spelling | Kim, B. S. Kyung, W. S. Seo, J. J. Kwon, J. Y. Denlinger, J. D. Kim, C. Park, S. R. 2045-2322 Springer Science and Business Media LLC Multidisciplinary http://dx.doi.org/10.1038/s41598-017-05613-5 <jats:title>Abstract</jats:title><jats:p>Direct band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX<jats:sub>2</jats:sub> (M = Mo, W; X = S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more practically usable bulk and multilayer MX<jats:sub>2</jats:sub> have indirect-gaps. It is thus highly desired to turn bulk and multilayer MX<jats:sub>2</jats:sub> into direct band-gap semiconductors by controlling external parameters. Here, we report angle-resolved photoemission spectroscopy (ARPES) results from Rb dosed MoSe<jats:sub>2</jats:sub> that suggest possibility for electric field induced indirect to direct band-gap transition in bulk MoSe<jats:sub>2</jats:sub>. The Rb concentration dependent data show detailed evolution of the band-gap, approaching a direct band-gap state. As ionized Rb layer on the surface provides a strong electric field perpendicular to the surface within a few surface layers of MoSe<jats:sub>2</jats:sub>, our data suggest that direct band-gap in MoSe<jats:sub>2</jats:sub> can be achieved if a strong electric field is applied, which is a step towards optoelectronic application of bulk materials.</jats:p> Possible electric field induced indirect to direct band gap transition in MoSe2 Scientific Reports |
| spellingShingle | Kim, B. S., Kyung, W. S., Seo, J. J., Kwon, J. Y., Denlinger, J. D., Kim, C., Park, S. R., Scientific Reports, Possible electric field induced indirect to direct band gap transition in MoSe2, Multidisciplinary |
| title | Possible electric field induced indirect to direct band gap transition in MoSe2 |
| title_full | Possible electric field induced indirect to direct band gap transition in MoSe2 |
| title_fullStr | Possible electric field induced indirect to direct band gap transition in MoSe2 |
| title_full_unstemmed | Possible electric field induced indirect to direct band gap transition in MoSe2 |
| title_short | Possible electric field induced indirect to direct band gap transition in MoSe2 |
| title_sort | possible electric field induced indirect to direct band gap transition in mose2 |
| title_unstemmed | Possible electric field induced indirect to direct band gap transition in MoSe2 |
| topic | Multidisciplinary |
| url | http://dx.doi.org/10.1038/s41598-017-05613-5 |