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Possible electric field induced indirect to direct band gap transition in MoSe2
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| Zeitschriftentitel: | Scientific Reports |
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| Personen und Körperschaften: | , , , , , , |
| In: | Scientific Reports, 7, 2017, 1 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
Springer Science and Business Media LLC
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| Schlagwörter: |
| Zusammenfassung: | <jats:title>Abstract</jats:title><jats:p>Direct band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX<jats:sub>2</jats:sub> (M = Mo, W; X = S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more practically usable bulk and multilayer MX<jats:sub>2</jats:sub> have indirect-gaps. It is thus highly desired to turn bulk and multilayer MX<jats:sub>2</jats:sub> into direct band-gap semiconductors by controlling external parameters. Here, we report angle-resolved photoemission spectroscopy (ARPES) results from Rb dosed MoSe<jats:sub>2</jats:sub> that suggest possibility for electric field induced indirect to direct band-gap transition in bulk MoSe<jats:sub>2</jats:sub>. The Rb concentration dependent data show detailed evolution of the band-gap, approaching a direct band-gap state. As ionized Rb layer on the surface provides a strong electric field perpendicular to the surface within a few surface layers of MoSe<jats:sub>2</jats:sub>, our data suggest that direct band-gap in MoSe<jats:sub>2</jats:sub> can be achieved if a strong electric field is applied, which is a step towards optoelectronic application of bulk materials.</jats:p> |
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| ISSN: |
2045-2322
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| DOI: | 10.1038/s41598-017-05613-5 |