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Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well
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| Zeitschriftentitel: | IOP Conference Series: Materials Science and Engineering |
|---|---|
| Personen und Körperschaften: | , |
| In: | IOP Conference Series: Materials Science and Engineering, 729, 2020, 1, S. 012104 |
| Format: | E-Article |
| Sprache: | Unbestimmt |
| veröffentlicht: |
IOP Publishing
|
| author_facet |
Gu, Lei Li, Lin Gu, Lei Li, Lin |
|---|---|
| author |
Gu, Lei Li, Lin |
| spellingShingle |
Gu, Lei Li, Lin IOP Conference Series: Materials Science and Engineering Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well |
| author_sort |
gu, lei |
| spelling |
Gu, Lei Li, Lin 1757-8981 1757-899X IOP Publishing http://dx.doi.org/10.1088/1757-899x/729/1/012104 <jats:title>Abstract</jats:title> <jats:p>InGaAs quantum wells (QWs) are grown on GaAs substrates by metal-organic chemieal vapor deposition (MOCVD). Sample grown on substrates (100) oriented 2° off towards <111> exhibits relatively high photoluminescence (PL) intensity and narrow full-width at half-maximum (FWHM). Increasing growth rate leads to the enhancement of PL intensity and decrease of FWHM. Asymmetric waveguide layers are applied to reduce the confinement factor of base mode and increase the loss of higher-order mode.</jats:p> Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well IOP Conference Series: Materials Science and Engineering |
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10.1088/1757-899x/729/1/012104 |
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| title |
Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well |
| title_unstemmed |
Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well |
| title_full |
Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well |
| title_fullStr |
Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well |
| title_full_unstemmed |
Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well |
| title_short |
Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well |
| title_sort |
study on optical properties and waveguide structure optimization of semiconductor lasers with ingaas quantum well |
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http://dx.doi.org/10.1088/1757-899x/729/1/012104 |
| publishDate |
2020 |
| physical |
012104 |
| description |
<jats:title>Abstract</jats:title>
<jats:p>InGaAs quantum wells (QWs) are grown on GaAs substrates by metal-organic chemieal vapor deposition (MOCVD). Sample grown on substrates (100) oriented 2° off towards <111> exhibits relatively high photoluminescence (PL) intensity and narrow full-width at half-maximum (FWHM). Increasing growth rate leads to the enhancement of PL intensity and decrease of FWHM. Asymmetric waveguide layers are applied to reduce the confinement factor of base mode and increase the loss of higher-order mode.</jats:p> |
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| author | Gu, Lei, Li, Lin |
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| container_title | IOP Conference Series: Materials Science and Engineering |
| container_volume | 729 |
| description | <jats:title>Abstract</jats:title> <jats:p>InGaAs quantum wells (QWs) are grown on GaAs substrates by metal-organic chemieal vapor deposition (MOCVD). Sample grown on substrates (100) oriented 2° off towards <111> exhibits relatively high photoluminescence (PL) intensity and narrow full-width at half-maximum (FWHM). Increasing growth rate leads to the enhancement of PL intensity and decrease of FWHM. Asymmetric waveguide layers are applied to reduce the confinement factor of base mode and increase the loss of higher-order mode.</jats:p> |
| doi_str_mv | 10.1088/1757-899x/729/1/012104 |
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| imprint | IOP Publishing, 2020 |
| imprint_str_mv | IOP Publishing, 2020 |
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| physical | 012104 |
| publishDate | 2020 |
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| publisher | IOP Publishing |
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| recordtype | ai |
| series | IOP Conference Series: Materials Science and Engineering |
| source_id | 49 |
| spelling | Gu, Lei Li, Lin 1757-8981 1757-899X IOP Publishing http://dx.doi.org/10.1088/1757-899x/729/1/012104 <jats:title>Abstract</jats:title> <jats:p>InGaAs quantum wells (QWs) are grown on GaAs substrates by metal-organic chemieal vapor deposition (MOCVD). Sample grown on substrates (100) oriented 2° off towards <111> exhibits relatively high photoluminescence (PL) intensity and narrow full-width at half-maximum (FWHM). Increasing growth rate leads to the enhancement of PL intensity and decrease of FWHM. Asymmetric waveguide layers are applied to reduce the confinement factor of base mode and increase the loss of higher-order mode.</jats:p> Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well IOP Conference Series: Materials Science and Engineering |
| spellingShingle | Gu, Lei, Li, Lin, IOP Conference Series: Materials Science and Engineering, Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well |
| title | Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well |
| title_full | Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well |
| title_fullStr | Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well |
| title_full_unstemmed | Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well |
| title_short | Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well |
| title_sort | study on optical properties and waveguide structure optimization of semiconductor lasers with ingaas quantum well |
| title_unstemmed | Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well |
| url | http://dx.doi.org/10.1088/1757-899x/729/1/012104 |