Eintrag weiter verarbeiten
Verfügbar über Online-Ressource

Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well

Gespeichert in:

Bibliographische Detailangaben
Zeitschriftentitel: IOP Conference Series: Materials Science and Engineering
Personen und Körperschaften: Gu, Lei, Li, Lin
In: IOP Conference Series: Materials Science and Engineering, 729, 2020, 1, S. 012104
Format: E-Article
Sprache: Unbestimmt
veröffentlicht:
IOP Publishing
Details
Zusammenfassung: <jats:title>Abstract</jats:title> <jats:p>InGaAs quantum wells (QWs) are grown on GaAs substrates by metal-organic chemieal vapor deposition (MOCVD). Sample grown on substrates (100) oriented 2° off towards &lt;111&gt; exhibits relatively high photoluminescence (PL) intensity and narrow full-width at half-maximum (FWHM). Increasing growth rate leads to the enhancement of PL intensity and decrease of FWHM. Asymmetric waveguide layers are applied to reduce the confinement factor of base mode and increase the loss of higher-order mode.</jats:p>
Umfang: 012104
ISSN: 1757-8981
1757-899X
DOI: 10.1088/1757-899x/729/1/012104