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Research on the Radiation Effects and Compact Model of SiGe HBT
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| Titel: | Research on the Radiation Effects and Compact Model of SiGe HBT/ by Yabin Sun |
| Format: | E-Book |
| Sprache: | Englisch |
| veröffentlicht: |
Singapore
Springer
2018
|
| Gesamtaufnahme: |
Springer Theses, Recognizing Outstanding Ph.D. Research SpringerLink Springer eBook Collection |
| Schlagwörter: | |
| Quelle: | Verbunddaten SWB |
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| 520 | |a This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique | ||
| 520 | |a Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion | ||
| 650 | 0 | |a Engineering | |
| 650 | 0 | |a Solid state physics | |
| 650 | 0 | |a Semiconductors | |
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| 650 | 0 | |a Microelectronics | |
| 650 | 0 | |a Optical materials | |
| 650 | 0 | |a Electronic materials | |
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| author | Sun, Yabin |
| author_facet | Sun, Yabin |
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| author_sort | Sun, Yabin |
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| contents | This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique, Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion |
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| spelling | Sun, Yabin (DE-588)1137977604 (DE-627)895284936 (DE-576)492302650 aut, Research on the Radiation Effects and Compact Model of SiGe HBT by Yabin Sun, Singapore Springer 2018, Online-Ressource (XXIV, 168 p. 171 illus, online resource), Text txt rdacontent, Computermedien c rdamedia, Online-Ressource cr rdacarrier, Springer Theses, Recognizing Outstanding Ph.D. Research, SpringerLink Bücher, Springer eBook Collection Engineering, This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique, Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion, Engineering, Solid state physics, Semiconductors, Electronic circuits, Electronics, Microelectronics, Optical materials, Electronic materials, 9789811046117, Druckausg. 978-981-10-4611-7, Printed edition 9789811046117, https://doi.org/10.1007/978-981-10-4612-4 B:SPRINGER Verlag lizenzpflichtig Volltext, https://swbplus.bsz-bw.de/bsz495039748cov.jpg V:DE-576 X:springer image/jpeg 20180119134944 Cover, (DE-627)1002539315, https://doi.org/10.1007/978-981-10-4612-4 DE-14, DE-14 epn:3421899460 2019-05-09T16:08:22Z, http://dx.doi.org/10.1007/978-981-10-4612-4 DE-Ch1, DE-Ch1 epn:3390703691 2017-12-07T13:32:00Z, DE-105 epn:339070390X 2018-03-12T17:30:14Z, http://dx.doi.org/10.1007/978-981-10-4612-4 DE-Zwi2, DE-Zwi2 epn:3390704248 2018-01-24T15:45:12Z |
| spellingShingle | Sun, Yabin, Research on the Radiation Effects and Compact Model of SiGe HBT, This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique, Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion, Engineering, Solid state physics, Semiconductors, Electronic circuits, Electronics, Microelectronics, Optical materials, Electronic materials |
| swb_id_str | 495039748 |
| title | Research on the Radiation Effects and Compact Model of SiGe HBT |
| title_auth | Research on the Radiation Effects and Compact Model of SiGe HBT |
| title_full | Research on the Radiation Effects and Compact Model of SiGe HBT by Yabin Sun |
| title_fullStr | Research on the Radiation Effects and Compact Model of SiGe HBT by Yabin Sun |
| title_full_unstemmed | Research on the Radiation Effects and Compact Model of SiGe HBT by Yabin Sun |
| title_short | Research on the Radiation Effects and Compact Model of SiGe HBT |
| title_sort | research on the radiation effects and compact model of sige hbt |
| title_unstemmed | Research on the Radiation Effects and Compact Model of SiGe HBT |
| topic | Engineering, Solid state physics, Semiconductors, Electronic circuits, Electronics, Microelectronics, Optical materials, Electronic materials |
| topic_facet | Engineering, Solid state physics, Semiconductors, Electronic circuits, Electronics, Microelectronics, Optical materials, Electronic materials |
| url | https://doi.org/10.1007/978-981-10-4612-4, https://swbplus.bsz-bw.de/bsz495039748cov.jpg, http://dx.doi.org/10.1007/978-981-10-4612-4 |
| work_keys_str_mv | AT sunyabin researchontheradiationeffectsandcompactmodelofsigehbt |