Research on the Radiation Effects and Compact Model of SiGe HBT

Gespeichert in:

Personen und Körperschaften:	Sun, Yabin (VerfasserIn)
Titel:	Research on the Radiation Effects and Compact Model of SiGe HBT/ by Yabin Sun
Format:	E-Book
Sprache:	Englisch
veröffentlicht:	Singapore Springer 2018
Gesamtaufnahme:	Springer Theses, Recognizing Outstanding Ph.D. Research SpringerLink Springer eBook Collection
Schlagwörter:	Engineering Solid state physics Semiconductors Electronic circuits Electronics Microelectronics Optical materials Electronic materials
Quelle:	Verbunddaten SWB

Details
Zusammenfassung:	This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique Introduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion
Umfang:	Online-Ressource (XXIV, 168 p. 171 illus, online resource)
ISBN:	9789811046124
DOI:	10.1007/978-981-10-4612-4