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Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer
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| Zeitschriftentitel: | Micromachines |
|---|---|
| Personen und Körperschaften: | , , , , , , , |
| In: | Micromachines, 10, 2019, 4, S. 227 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
MDPI AG
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| Schlagwörter: |
| author_facet |
Cai, Shengran Li, Wei Zou, Hongshuo Bao, Haifei Zhang, Kun Wang, Jiachou Song, Zhaohui Li, Xinxin Cai, Shengran Li, Wei Zou, Hongshuo Bao, Haifei Zhang, Kun Wang, Jiachou Song, Zhaohui Li, Xinxin |
|---|---|
| author |
Cai, Shengran Li, Wei Zou, Hongshuo Bao, Haifei Zhang, Kun Wang, Jiachou Song, Zhaohui Li, Xinxin |
| spellingShingle |
Cai, Shengran Li, Wei Zou, Hongshuo Bao, Haifei Zhang, Kun Wang, Jiachou Song, Zhaohui Li, Xinxin Micromachines Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer Electrical and Electronic Engineering Mechanical Engineering Control and Systems Engineering |
| author_sort |
cai, shengran |
| spelling |
Cai, Shengran Li, Wei Zou, Hongshuo Bao, Haifei Zhang, Kun Wang, Jiachou Song, Zhaohui Li, Xinxin 2072-666X MDPI AG Electrical and Electronic Engineering Mechanical Engineering Control and Systems Engineering http://dx.doi.org/10.3390/mi10040227 <jats:p>In this paper, a monolithic tri-axis piezoresistive high-shock accelerometer has been proposed that has been single-sided fabricated in a single (111)-silicon wafer. A single-cantilever structure and two dual-cantilever structures are designed and micromachined in one (111)-silicon chip to detect Z-axis and X-/Y-axis high-shock accelerations, respectively. Unlike the previous tri-axis sensors where the X-/Y-axis structure was different from the Z-axis one, the herein used similar cantilever sensing structures for tri-axis sensing facilitates design of uniform performance among the three elements for different sensing axes and simplifies micro-fabrication for the multi-axis sensing structure. Attributed to the tri-axis sensors formed by using the single-wafer single-sided fabrication process, the sensor is mechanically robust enough to endure the harsh high-g shocking environment and can be compatibly batch-fabricated in standard semiconductor foundries. After the single-sided process to form the sensor, the untouched chip backside facilitates simple and reliable die-bond packaging. The high-shock testing results of the fabricated sensor show linear sensing outputs along X-/Y-axis and Z-axis, with the sensitivities (under DC 5 V supply) as about 0.80–0.88 μV/g and 1.36 μV/g, respectively. Being advantageous in single-chip compact integration of the tri-axis accelerometers, the proposed monolithic tri-axis sensors are promising to be embedded into detection micro-systems for high-shock measurement applications.</jats:p> Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer Micromachines |
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10.3390/mi10040227 |
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MDPI AG, 2019 |
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MDPI AG, 2019 |
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2072-666X |
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2072-666X |
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| title |
Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer |
| title_unstemmed |
Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer |
| title_full |
Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer |
| title_fullStr |
Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer |
| title_full_unstemmed |
Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer |
| title_short |
Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer |
| title_sort |
design, fabrication, and testing of a monolithically integrated tri-axis high-shock accelerometer in single (111)-silicon wafer |
| topic |
Electrical and Electronic Engineering Mechanical Engineering Control and Systems Engineering |
| url |
http://dx.doi.org/10.3390/mi10040227 |
| publishDate |
2019 |
| physical |
227 |
| description |
<jats:p>In this paper, a monolithic tri-axis piezoresistive high-shock accelerometer has been proposed that has been single-sided fabricated in a single (111)-silicon wafer. A single-cantilever structure and two dual-cantilever structures are designed and micromachined in one (111)-silicon chip to detect Z-axis and X-/Y-axis high-shock accelerations, respectively. Unlike the previous tri-axis sensors where the X-/Y-axis structure was different from the Z-axis one, the herein used similar cantilever sensing structures for tri-axis sensing facilitates design of uniform performance among the three elements for different sensing axes and simplifies micro-fabrication for the multi-axis sensing structure. Attributed to the tri-axis sensors formed by using the single-wafer single-sided fabrication process, the sensor is mechanically robust enough to endure the harsh high-g shocking environment and can be compatibly batch-fabricated in standard semiconductor foundries. After the single-sided process to form the sensor, the untouched chip backside facilitates simple and reliable die-bond packaging. The high-shock testing results of the fabricated sensor show linear sensing outputs along X-/Y-axis and Z-axis, with the sensitivities (under DC 5 V supply) as about 0.80–0.88 μV/g and 1.36 μV/g, respectively. Being advantageous in single-chip compact integration of the tri-axis accelerometers, the proposed monolithic tri-axis sensors are promising to be embedded into detection micro-systems for high-shock measurement applications.</jats:p> |
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| author | Cai, Shengran, Li, Wei, Zou, Hongshuo, Bao, Haifei, Zhang, Kun, Wang, Jiachou, Song, Zhaohui, Li, Xinxin |
| author_facet | Cai, Shengran, Li, Wei, Zou, Hongshuo, Bao, Haifei, Zhang, Kun, Wang, Jiachou, Song, Zhaohui, Li, Xinxin, Cai, Shengran, Li, Wei, Zou, Hongshuo, Bao, Haifei, Zhang, Kun, Wang, Jiachou, Song, Zhaohui, Li, Xinxin |
| author_sort | cai, shengran |
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| description | <jats:p>In this paper, a monolithic tri-axis piezoresistive high-shock accelerometer has been proposed that has been single-sided fabricated in a single (111)-silicon wafer. A single-cantilever structure and two dual-cantilever structures are designed and micromachined in one (111)-silicon chip to detect Z-axis and X-/Y-axis high-shock accelerations, respectively. Unlike the previous tri-axis sensors where the X-/Y-axis structure was different from the Z-axis one, the herein used similar cantilever sensing structures for tri-axis sensing facilitates design of uniform performance among the three elements for different sensing axes and simplifies micro-fabrication for the multi-axis sensing structure. Attributed to the tri-axis sensors formed by using the single-wafer single-sided fabrication process, the sensor is mechanically robust enough to endure the harsh high-g shocking environment and can be compatibly batch-fabricated in standard semiconductor foundries. After the single-sided process to form the sensor, the untouched chip backside facilitates simple and reliable die-bond packaging. The high-shock testing results of the fabricated sensor show linear sensing outputs along X-/Y-axis and Z-axis, with the sensitivities (under DC 5 V supply) as about 0.80–0.88 μV/g and 1.36 μV/g, respectively. Being advantageous in single-chip compact integration of the tri-axis accelerometers, the proposed monolithic tri-axis sensors are promising to be embedded into detection micro-systems for high-shock measurement applications.</jats:p> |
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| imprint | MDPI AG, 2019 |
| imprint_str_mv | MDPI AG, 2019 |
| institution | DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-Zwi2, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1 |
| issn | 2072-666X |
| issn_str_mv | 2072-666X |
| language | English |
| last_indexed | 2024-03-01T16:43:45.847Z |
| match_str | cai2019designfabricationandtestingofamonolithicallyintegratedtriaxishighshockaccelerometerinsingle111siliconwafer |
| mega_collection | MDPI AG (CrossRef) |
| physical | 227 |
| publishDate | 2019 |
| publishDateSort | 2019 |
| publisher | MDPI AG |
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| series | Micromachines |
| source_id | 49 |
| spelling | Cai, Shengran Li, Wei Zou, Hongshuo Bao, Haifei Zhang, Kun Wang, Jiachou Song, Zhaohui Li, Xinxin 2072-666X MDPI AG Electrical and Electronic Engineering Mechanical Engineering Control and Systems Engineering http://dx.doi.org/10.3390/mi10040227 <jats:p>In this paper, a monolithic tri-axis piezoresistive high-shock accelerometer has been proposed that has been single-sided fabricated in a single (111)-silicon wafer. A single-cantilever structure and two dual-cantilever structures are designed and micromachined in one (111)-silicon chip to detect Z-axis and X-/Y-axis high-shock accelerations, respectively. Unlike the previous tri-axis sensors where the X-/Y-axis structure was different from the Z-axis one, the herein used similar cantilever sensing structures for tri-axis sensing facilitates design of uniform performance among the three elements for different sensing axes and simplifies micro-fabrication for the multi-axis sensing structure. Attributed to the tri-axis sensors formed by using the single-wafer single-sided fabrication process, the sensor is mechanically robust enough to endure the harsh high-g shocking environment and can be compatibly batch-fabricated in standard semiconductor foundries. After the single-sided process to form the sensor, the untouched chip backside facilitates simple and reliable die-bond packaging. The high-shock testing results of the fabricated sensor show linear sensing outputs along X-/Y-axis and Z-axis, with the sensitivities (under DC 5 V supply) as about 0.80–0.88 μV/g and 1.36 μV/g, respectively. Being advantageous in single-chip compact integration of the tri-axis accelerometers, the proposed monolithic tri-axis sensors are promising to be embedded into detection micro-systems for high-shock measurement applications.</jats:p> Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer Micromachines |
| spellingShingle | Cai, Shengran, Li, Wei, Zou, Hongshuo, Bao, Haifei, Zhang, Kun, Wang, Jiachou, Song, Zhaohui, Li, Xinxin, Micromachines, Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer, Electrical and Electronic Engineering, Mechanical Engineering, Control and Systems Engineering |
| title | Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer |
| title_full | Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer |
| title_fullStr | Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer |
| title_full_unstemmed | Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer |
| title_short | Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer |
| title_sort | design, fabrication, and testing of a monolithically integrated tri-axis high-shock accelerometer in single (111)-silicon wafer |
| title_unstemmed | Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer |
| topic | Electrical and Electronic Engineering, Mechanical Engineering, Control and Systems Engineering |
| url | http://dx.doi.org/10.3390/mi10040227 |