author_facet Wu, Chuanbao
Wang, Yunwei
Wu, Chuanbao
Wang, Yunwei
author Wu, Chuanbao
Wang, Yunwei
spellingShingle Wu, Chuanbao
Wang, Yunwei
Coatings
Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method
Materials Chemistry
Surfaces, Coatings and Films
Surfaces and Interfaces
author_sort wu, chuanbao
spelling Wu, Chuanbao Wang, Yunwei 2079-6412 MDPI AG Materials Chemistry Surfaces, Coatings and Films Surfaces and Interfaces http://dx.doi.org/10.3390/coatings9070437 <jats:p>We developed a solution-derived method to establish a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x quasi-trilayer architecture. Using the method, nano-scale pinning sites were induced into the quasi-trilayer architecture and yielded an apparent improvement in the in-field critical current density (Jc) of high-quality YBa2Cu3O7−x (YBCO). The improvement in the in-field Jc of the films was closely related to the thickness of the LaAlO3 (LAO) interlayer. In this paper it is demonstrated that when the nominal interlayer thickness approximates 20 nm, which is slightly higher than the roughness of the YBa2Cu3O7−x surface, the LaAlO3 interlayer is discontinuous due to synchromesh-like growth of the LaAlO3 layer on relatively rough YBa2Cu3O7−x surface resulting from the mobility of the solution. Nanoscale defects, such as particles, some amorphous phases, and especially their concomitant lattice defects (such as stacking faults and plane buckling) arise in YBa2Cu3O7−x layers. These nanoscale defects could play a role in flux pinning and thus enhancing Jc. The effective non-vacuum solution to induce vortex pinning into YBa2Cu3O7−x films could be a reference for the further design of an optimal pinning landscape for higher Jc.</jats:p> Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method Coatings
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source_id 49
title Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method
title_unstemmed Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method
title_full Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method
title_fullStr Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method
title_full_unstemmed Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method
title_short Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method
title_sort enhancement of critical current density by establishing a yba2cu3o7−x/laalo3/yba2cu3o7−x quasi-trilayer architecture using the sol-gel method
topic Materials Chemistry
Surfaces, Coatings and Films
Surfaces and Interfaces
url http://dx.doi.org/10.3390/coatings9070437
publishDate 2019
physical 437
description <jats:p>We developed a solution-derived method to establish a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x quasi-trilayer architecture. Using the method, nano-scale pinning sites were induced into the quasi-trilayer architecture and yielded an apparent improvement in the in-field critical current density (Jc) of high-quality YBa2Cu3O7−x (YBCO). The improvement in the in-field Jc of the films was closely related to the thickness of the LaAlO3 (LAO) interlayer. In this paper it is demonstrated that when the nominal interlayer thickness approximates 20 nm, which is slightly higher than the roughness of the YBa2Cu3O7−x surface, the LaAlO3 interlayer is discontinuous due to synchromesh-like growth of the LaAlO3 layer on relatively rough YBa2Cu3O7−x surface resulting from the mobility of the solution. Nanoscale defects, such as particles, some amorphous phases, and especially their concomitant lattice defects (such as stacking faults and plane buckling) arise in YBa2Cu3O7−x layers. These nanoscale defects could play a role in flux pinning and thus enhancing Jc. The effective non-vacuum solution to induce vortex pinning into YBa2Cu3O7−x films could be a reference for the further design of an optimal pinning landscape for higher Jc.</jats:p>
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author Wu, Chuanbao, Wang, Yunwei
author_facet Wu, Chuanbao, Wang, Yunwei, Wu, Chuanbao, Wang, Yunwei
author_sort wu, chuanbao
container_issue 7
container_start_page 0
container_title Coatings
container_volume 9
description <jats:p>We developed a solution-derived method to establish a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x quasi-trilayer architecture. Using the method, nano-scale pinning sites were induced into the quasi-trilayer architecture and yielded an apparent improvement in the in-field critical current density (Jc) of high-quality YBa2Cu3O7−x (YBCO). The improvement in the in-field Jc of the films was closely related to the thickness of the LaAlO3 (LAO) interlayer. In this paper it is demonstrated that when the nominal interlayer thickness approximates 20 nm, which is slightly higher than the roughness of the YBa2Cu3O7−x surface, the LaAlO3 interlayer is discontinuous due to synchromesh-like growth of the LaAlO3 layer on relatively rough YBa2Cu3O7−x surface resulting from the mobility of the solution. Nanoscale defects, such as particles, some amorphous phases, and especially their concomitant lattice defects (such as stacking faults and plane buckling) arise in YBa2Cu3O7−x layers. These nanoscale defects could play a role in flux pinning and thus enhancing Jc. The effective non-vacuum solution to induce vortex pinning into YBa2Cu3O7−x films could be a reference for the further design of an optimal pinning landscape for higher Jc.</jats:p>
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imprint_str_mv MDPI AG, 2019
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spelling Wu, Chuanbao Wang, Yunwei 2079-6412 MDPI AG Materials Chemistry Surfaces, Coatings and Films Surfaces and Interfaces http://dx.doi.org/10.3390/coatings9070437 <jats:p>We developed a solution-derived method to establish a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x quasi-trilayer architecture. Using the method, nano-scale pinning sites were induced into the quasi-trilayer architecture and yielded an apparent improvement in the in-field critical current density (Jc) of high-quality YBa2Cu3O7−x (YBCO). The improvement in the in-field Jc of the films was closely related to the thickness of the LaAlO3 (LAO) interlayer. In this paper it is demonstrated that when the nominal interlayer thickness approximates 20 nm, which is slightly higher than the roughness of the YBa2Cu3O7−x surface, the LaAlO3 interlayer is discontinuous due to synchromesh-like growth of the LaAlO3 layer on relatively rough YBa2Cu3O7−x surface resulting from the mobility of the solution. Nanoscale defects, such as particles, some amorphous phases, and especially their concomitant lattice defects (such as stacking faults and plane buckling) arise in YBa2Cu3O7−x layers. These nanoscale defects could play a role in flux pinning and thus enhancing Jc. The effective non-vacuum solution to induce vortex pinning into YBa2Cu3O7−x films could be a reference for the further design of an optimal pinning landscape for higher Jc.</jats:p> Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method Coatings
spellingShingle Wu, Chuanbao, Wang, Yunwei, Coatings, Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method, Materials Chemistry, Surfaces, Coatings and Films, Surfaces and Interfaces
title Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method
title_full Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method
title_fullStr Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method
title_full_unstemmed Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method
title_short Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method
title_sort enhancement of critical current density by establishing a yba2cu3o7−x/laalo3/yba2cu3o7−x quasi-trilayer architecture using the sol-gel method
title_unstemmed Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method
topic Materials Chemistry, Surfaces, Coatings and Films, Surfaces and Interfaces
url http://dx.doi.org/10.3390/coatings9070437