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Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method
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Zeitschriftentitel: | Coatings |
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Personen und Körperschaften: | , |
In: | Coatings, 9, 2019, 7, S. 437 |
Format: | E-Article |
Sprache: | Englisch |
veröffentlicht: |
MDPI AG
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Schlagwörter: |
author_facet |
Wu, Chuanbao Wang, Yunwei Wu, Chuanbao Wang, Yunwei |
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author |
Wu, Chuanbao Wang, Yunwei |
spellingShingle |
Wu, Chuanbao Wang, Yunwei Coatings Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method Materials Chemistry Surfaces, Coatings and Films Surfaces and Interfaces |
author_sort |
wu, chuanbao |
spelling |
Wu, Chuanbao Wang, Yunwei 2079-6412 MDPI AG Materials Chemistry Surfaces, Coatings and Films Surfaces and Interfaces http://dx.doi.org/10.3390/coatings9070437 <jats:p>We developed a solution-derived method to establish a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x quasi-trilayer architecture. Using the method, nano-scale pinning sites were induced into the quasi-trilayer architecture and yielded an apparent improvement in the in-field critical current density (Jc) of high-quality YBa2Cu3O7−x (YBCO). The improvement in the in-field Jc of the films was closely related to the thickness of the LaAlO3 (LAO) interlayer. In this paper it is demonstrated that when the nominal interlayer thickness approximates 20 nm, which is slightly higher than the roughness of the YBa2Cu3O7−x surface, the LaAlO3 interlayer is discontinuous due to synchromesh-like growth of the LaAlO3 layer on relatively rough YBa2Cu3O7−x surface resulting from the mobility of the solution. Nanoscale defects, such as particles, some amorphous phases, and especially their concomitant lattice defects (such as stacking faults and plane buckling) arise in YBa2Cu3O7−x layers. These nanoscale defects could play a role in flux pinning and thus enhancing Jc. The effective non-vacuum solution to induce vortex pinning into YBa2Cu3O7−x films could be a reference for the further design of an optimal pinning landscape for higher Jc.</jats:p> Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method Coatings |
doi_str_mv |
10.3390/coatings9070437 |
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Allgemeines Technik Chemie und Pharmazie |
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MDPI AG, 2019 |
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MDPI AG, 2019 |
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2079-6412 |
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title |
Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method |
title_unstemmed |
Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method |
title_full |
Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method |
title_fullStr |
Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method |
title_full_unstemmed |
Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method |
title_short |
Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method |
title_sort |
enhancement of critical current density by establishing a yba2cu3o7−x/laalo3/yba2cu3o7−x quasi-trilayer architecture using the sol-gel method |
topic |
Materials Chemistry Surfaces, Coatings and Films Surfaces and Interfaces |
url |
http://dx.doi.org/10.3390/coatings9070437 |
publishDate |
2019 |
physical |
437 |
description |
<jats:p>We developed a solution-derived method to establish a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x quasi-trilayer architecture. Using the method, nano-scale pinning sites were induced into the quasi-trilayer architecture and yielded an apparent improvement in the in-field critical current density (Jc) of high-quality YBa2Cu3O7−x (YBCO). The improvement in the in-field Jc of the films was closely related to the thickness of the LaAlO3 (LAO) interlayer. In this paper it is demonstrated that when the nominal interlayer thickness approximates 20 nm, which is slightly higher than the roughness of the YBa2Cu3O7−x surface, the LaAlO3 interlayer is discontinuous due to synchromesh-like growth of the LaAlO3 layer on relatively rough YBa2Cu3O7−x surface resulting from the mobility of the solution. Nanoscale defects, such as particles, some amorphous phases, and especially their concomitant lattice defects (such as stacking faults and plane buckling) arise in YBa2Cu3O7−x layers. These nanoscale defects could play a role in flux pinning and thus enhancing Jc. The effective non-vacuum solution to induce vortex pinning into YBa2Cu3O7−x films could be a reference for the further design of an optimal pinning landscape for higher Jc.</jats:p> |
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author | Wu, Chuanbao, Wang, Yunwei |
author_facet | Wu, Chuanbao, Wang, Yunwei, Wu, Chuanbao, Wang, Yunwei |
author_sort | wu, chuanbao |
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description | <jats:p>We developed a solution-derived method to establish a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x quasi-trilayer architecture. Using the method, nano-scale pinning sites were induced into the quasi-trilayer architecture and yielded an apparent improvement in the in-field critical current density (Jc) of high-quality YBa2Cu3O7−x (YBCO). The improvement in the in-field Jc of the films was closely related to the thickness of the LaAlO3 (LAO) interlayer. In this paper it is demonstrated that when the nominal interlayer thickness approximates 20 nm, which is slightly higher than the roughness of the YBa2Cu3O7−x surface, the LaAlO3 interlayer is discontinuous due to synchromesh-like growth of the LaAlO3 layer on relatively rough YBa2Cu3O7−x surface resulting from the mobility of the solution. Nanoscale defects, such as particles, some amorphous phases, and especially their concomitant lattice defects (such as stacking faults and plane buckling) arise in YBa2Cu3O7−x layers. These nanoscale defects could play a role in flux pinning and thus enhancing Jc. The effective non-vacuum solution to induce vortex pinning into YBa2Cu3O7−x films could be a reference for the further design of an optimal pinning landscape for higher Jc.</jats:p> |
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spelling | Wu, Chuanbao Wang, Yunwei 2079-6412 MDPI AG Materials Chemistry Surfaces, Coatings and Films Surfaces and Interfaces http://dx.doi.org/10.3390/coatings9070437 <jats:p>We developed a solution-derived method to establish a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x quasi-trilayer architecture. Using the method, nano-scale pinning sites were induced into the quasi-trilayer architecture and yielded an apparent improvement in the in-field critical current density (Jc) of high-quality YBa2Cu3O7−x (YBCO). The improvement in the in-field Jc of the films was closely related to the thickness of the LaAlO3 (LAO) interlayer. In this paper it is demonstrated that when the nominal interlayer thickness approximates 20 nm, which is slightly higher than the roughness of the YBa2Cu3O7−x surface, the LaAlO3 interlayer is discontinuous due to synchromesh-like growth of the LaAlO3 layer on relatively rough YBa2Cu3O7−x surface resulting from the mobility of the solution. Nanoscale defects, such as particles, some amorphous phases, and especially their concomitant lattice defects (such as stacking faults and plane buckling) arise in YBa2Cu3O7−x layers. These nanoscale defects could play a role in flux pinning and thus enhancing Jc. The effective non-vacuum solution to induce vortex pinning into YBa2Cu3O7−x films could be a reference for the further design of an optimal pinning landscape for higher Jc.</jats:p> Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method Coatings |
spellingShingle | Wu, Chuanbao, Wang, Yunwei, Coatings, Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method, Materials Chemistry, Surfaces, Coatings and Films, Surfaces and Interfaces |
title | Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method |
title_full | Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method |
title_fullStr | Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method |
title_full_unstemmed | Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method |
title_short | Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method |
title_sort | enhancement of critical current density by establishing a yba2cu3o7−x/laalo3/yba2cu3o7−x quasi-trilayer architecture using the sol-gel method |
title_unstemmed | Enhancement of Critical Current Density by Establishing a YBa2Cu3O7−x/LaAlO3/YBa2Cu3O7−x Quasi-Trilayer Architecture Using the Sol-Gel Method |
topic | Materials Chemistry, Surfaces, Coatings and Films, Surfaces and Interfaces |
url | http://dx.doi.org/10.3390/coatings9070437 |