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Photovoltage Formation Across Si P-N Junction Exposed to Laser Radiation
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| Zeitschriftentitel: | Materials Science-Poland |
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| Personen und Körperschaften: | , , , , , , , , , |
| In: | Materials Science-Poland, 36, 2018, 2, S. 337-340 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
Walter de Gruyter GmbH
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| Schlagwörter: |
| Zusammenfassung: | <jats:title>Abstract</jats:title> <jats:p> Photovoltage formation across Si p-n junction exposed to laser radiation is experimentally investigated. Illumination of the junction with 1.06 μm wavelength laser radiation leads to formation of classical photovoltage U<jats:sub>ph</jats:sub>due to intense electronhole pair generation. When the photon energy is lower than the semiconductor forbidden energy gap, the photovoltage U is found to consist of two components, U = U<jats:sub>f</jats:sub>+ U<jats:sub>ph</jats:sub>. The first Uf is a fast one having polarity of thermoelectromotive force of hot carriers. The second U<jats:sub>ph</jats:sub>is classical photovoltage with polarity opposite to U<jats:sub>f</jats:sub>. It is found that U<jats:sub>f</jats:sub>is linearly dependent on laser intensity. The classical photovoltage is established to decrease with the rise of radiation wavelength due to decrease in two-photon absorption coefficient with wavelength. Predominance of each separate component in the formation of the net photovoltage depends on both laser wavelength and intensity</jats:p> |
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| Umfang: | 337-340 |
| ISSN: |
2083-134X
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| DOI: | 10.1515/msp-2017-0106 |