author_facet Was, G. S.
Ji, H.
Ma, Z.
Was, G. S.
Ji, H.
Ma, Z.
author Was, G. S.
Ji, H.
Ma, Z.
spellingShingle Was, G. S.
Ji, H.
Ma, Z.
Textures and Microstructures
Texture Control in Thin Films Using Ion Bombardment
General Engineering
author_sort was, g. s.
spelling Was, G. S. Ji, H. Ma, Z. 0730-3300 1029-4961 Hindawi Limited General Engineering http://dx.doi.org/10.1155/tsm.34.105 <jats:p>The development of texture in thin films under ion bombardment is believed to occur due to the preferential growth of the aligned grains in the film relative to the unaligned grains. The difference in growth rates between aligned and unaligned grains results in the development of texture with increasing thickness. Both out-of-plane (fiber) and in-plane texture can be controlled during ion bombardment. Experiments were performed to create a (110) out-of-plane texture in thin aluminum films and to create a (110) in-plane texture in niobium films. Results showed that the texture in both cases increases in strength with depth, and that for 500 nm Al films, the (110) texture was stronger than the thermodynamically-preferred (111) texture obtained by physical vapor deposition. Results confirm a texturing mechanism based on ion channeling and preferential sputtering.</jats:p> Texture Control in Thin Films Using Ion Bombardment Textures and Microstructures
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title Texture Control in Thin Films Using Ion Bombardment
title_unstemmed Texture Control in Thin Films Using Ion Bombardment
title_full Texture Control in Thin Films Using Ion Bombardment
title_fullStr Texture Control in Thin Films Using Ion Bombardment
title_full_unstemmed Texture Control in Thin Films Using Ion Bombardment
title_short Texture Control in Thin Films Using Ion Bombardment
title_sort texture control in thin films using ion bombardment
topic General Engineering
url http://dx.doi.org/10.1155/tsm.34.105
publishDate 2000
physical 105-118
description <jats:p>The development of texture in thin films under ion bombardment is believed to occur due to the preferential growth of the aligned grains in the film relative to the unaligned grains. The difference in growth rates between aligned and unaligned grains results in the development of texture with increasing thickness. Both out-of-plane (fiber) and in-plane texture can be controlled during ion bombardment. Experiments were performed to create a (110) out-of-plane texture in thin aluminum films and to create a (110) in-plane texture in niobium films. Results showed that the texture in both cases increases in strength with depth, and that for 500 nm Al films, the (110) texture was stronger than the thermodynamically-preferred (111) texture obtained by physical vapor deposition. Results confirm a texturing mechanism based on ion channeling and preferential sputtering.</jats:p>
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author Was, G. S., Ji, H., Ma, Z.
author_facet Was, G. S., Ji, H., Ma, Z., Was, G. S., Ji, H., Ma, Z.
author_sort was, g. s.
container_issue 2-3
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container_title Textures and Microstructures
container_volume 34
description <jats:p>The development of texture in thin films under ion bombardment is believed to occur due to the preferential growth of the aligned grains in the film relative to the unaligned grains. The difference in growth rates between aligned and unaligned grains results in the development of texture with increasing thickness. Both out-of-plane (fiber) and in-plane texture can be controlled during ion bombardment. Experiments were performed to create a (110) out-of-plane texture in thin aluminum films and to create a (110) in-plane texture in niobium films. Results showed that the texture in both cases increases in strength with depth, and that for 500 nm Al films, the (110) texture was stronger than the thermodynamically-preferred (111) texture obtained by physical vapor deposition. Results confirm a texturing mechanism based on ion channeling and preferential sputtering.</jats:p>
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spelling Was, G. S. Ji, H. Ma, Z. 0730-3300 1029-4961 Hindawi Limited General Engineering http://dx.doi.org/10.1155/tsm.34.105 <jats:p>The development of texture in thin films under ion bombardment is believed to occur due to the preferential growth of the aligned grains in the film relative to the unaligned grains. The difference in growth rates between aligned and unaligned grains results in the development of texture with increasing thickness. Both out-of-plane (fiber) and in-plane texture can be controlled during ion bombardment. Experiments were performed to create a (110) out-of-plane texture in thin aluminum films and to create a (110) in-plane texture in niobium films. Results showed that the texture in both cases increases in strength with depth, and that for 500 nm Al films, the (110) texture was stronger than the thermodynamically-preferred (111) texture obtained by physical vapor deposition. Results confirm a texturing mechanism based on ion channeling and preferential sputtering.</jats:p> Texture Control in Thin Films Using Ion Bombardment Textures and Microstructures
spellingShingle Was, G. S., Ji, H., Ma, Z., Textures and Microstructures, Texture Control in Thin Films Using Ion Bombardment, General Engineering
title Texture Control in Thin Films Using Ion Bombardment
title_full Texture Control in Thin Films Using Ion Bombardment
title_fullStr Texture Control in Thin Films Using Ion Bombardment
title_full_unstemmed Texture Control in Thin Films Using Ion Bombardment
title_short Texture Control in Thin Films Using Ion Bombardment
title_sort texture control in thin films using ion bombardment
title_unstemmed Texture Control in Thin Films Using Ion Bombardment
topic General Engineering
url http://dx.doi.org/10.1155/tsm.34.105