APA Citation

Kang, D.(2012). Electronic and Bonding Properties of BaGaGeH: Hydrogen-induced Metal-insulator Transition from the AlB2-type BaGaGe Precursor. Bulletin of the Korean Chemical Society, 33(1), 153-158. doi:10.5012/bkcs.2012.33.1.153

MLA Citation

Kang, Dae-Bok. "Electronic and Bonding Properties of BaGaGeH: Hydrogen-induced Metal-insulator Transition From the AlB2-type BaGaGe Precursor". Bulletin of the Korean Chemical Society, 33.1 ( 2012 ): 153-158.

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